An Investigation of Thin Single-Crystal Silicon Films on Insulator/Polycrystalline-Silicon Substrates

摘要

The report summarizes the results of a nine-month, research-and-development study of the material properties of thin, single-crystal silicon films supported by insulator/polycrystalline-silicon substrates. Considerable effort was devoted to developing reproducible processes for the fabrication of these thin films, and methods were developed to evaluate their quality. After reasonable film quality had been obtained, the properties of the films were investigated in more detail. The majority-carrier mobility and minority-carrier lifetime were studied. Diffusion of dopant impurity atoms into the films and oxidation of the films were considered, and the stress in the thin films was investigated.