Growth Twinning and Stacking Faults in Corundum.

摘要

Several corundum crystals gorwn by the flux method were etched with hot KHSO4and studied with an optical microscope. Examination showed a new form of line and pit pattern in addition to the more usual patterns formed by twin boundaries and dislocations. Several photographs and a simple model of atomic packing arrangement are presented to show that the new patterns probably are the result of stacking faults and partial dislocations. (Author)