SILICON DIODE TARGET TUBE DEVELOPMENT

摘要

Improved television blooming control in a silicon-diode-array vidicon target has been achieved using a mesa diode structure with deep valleys etched using the orientation-dependent-etch properties of silicon. A reduction from 13 to 5.6 of the ratio of the bloomed to the unbloomed spot diameters over a 100,000 light level change was accomplished in the vidicon mode. The target process is discussed along with the associated problems. The operating parameters of the targets are compared to those of conventional planar arrays in both the vidicon and the EBS modes of operation. Recommendations are made for future development and target improvement. (Author)