Physics of Semiconductor Luminescence and High-Temperature Semiconductors

摘要

A new luminescence modulation effect was observed in Si and Ge and a new negative resistance phenomenon discovered in Ge. The intrinsic energy band levels in (Al,Ga)As were studied as a function of alloy composition, and the modulation of (Al,Ga)As luminescence by surface fields investigated. Higher quality crystals of the wide band-gap semiconductor stannic oxide than previously available were grown and extensive studies were undertaken of SnO2's electrical and optical properties, crystal growth, and device technology. (Author)