Probable Observation of Unusual Local Vibrational Modes in the Oscillatory Photoconductivity of Semi-Insulating GaAs.

摘要

We have observed oscillatory photoconductivity with a period of 20.9 meV in semi-insulating GaAs at T = 18-23 K. These oscillations are associated with the 0.75 eV impurity level in GaAs which has often been attributed to 0. It is suggested that the oscillations are due to a cascade process involving multiple emission of a local vibrational mode, of energy 20.9 meV, associated with the 0.75 eV defect. (Author)