Planar InSb Photodiodes Fabricated by Be and Mg Ion Implantations.

摘要

Planar p-n junction photodiodes in InSb have been made by ion implantation of Be and Mg acceptors. Both ions were incorporated with a doping efficiency of about 50 per cent and each produced excellent photodiodes. At 77 K, 20-mil-dia. diodes have typical zero-bias resistances of 6 ohms. At the wavelength peak of 5.3 micrometers, quantum efficiencies of 60-70 per cent and detectivities with a 77 K background of 2 time 10 to the 12th power cm square root of (Hz)/W were measured. Field plate guard rings were used to adjust the surface potential at the diode perimeters for optimum performance. (Author)