MILLIMETER WAVE AVALANCHE TRANSIT TIME DIODE AMPLIFIER

摘要

Millimeter wave avalanche diodes and avalanche diode amplifiers (ADAs) were investigated. Epitaxial GaAs material were fabricated. The device development program resulted in diodes with over 400 milliwatts output power. Several single stage ADAs have been designed, built and tested. Non-linear effects in the amplifiers at high power operation were investigated. At the conclusion of the program, two 2-stage ADAs were constructed. When the amplifiers were integrated into a single 4-stage ADA, 17 dB gain with 250 milliwatt output power has been obtained.