Silicon Nitride: A Promising Material for Radome Applications.

摘要

Dielectric properties of various reaction-sintered and hot-pressed silicon nitride specimens were measured at 10GHz at room temperature, 1000F and 2000F. Dielectric constant values ranged from 5.5to 9.3,and loss tangent values from 0.001to 0.16. The major detrimental impurity was identified as residual unreacted silicon. (Author)