Studies of the Nuclear Radiation Performance of Isoplanar Integrated Circuits and Circuit Components.

摘要

The report describes the work accomplished in a program to measure and analyze the nuclear radiation performance of transistors,diodes,and integrated circuits fabricated with the standard Fairchild Isoplanar processes,the Fairchild dielectrically isolated Isoplanar process,and the Fairchild Isopoly or V-groove dielectric isolation process. These devices were characterized electrically and then exposed to ionizing dose,transient gamma,and fast neutron radiation environments to determine the effects of these environments on device performance. The possibility of new and/or different failure modes that could limit the use of these devices in the various radiation environments was investigated. (Modified author abstract)