A Study of Electronics Radiation Hardness Assurance Techniques. Volume II,Part 2. Electrical Screening for Ionizing Radiation Rate and Total Dose Effects.

摘要

The electrical screening approach examined correlations between certain initial electrical parameters and the radiation sensitivities of the devices. The correlation parameters were selected on the basis of physical reasoning and the radiation sensitivities were defined differently for the various radiation environments. Ionizing radiation rate hardness assurance is treated with subdivision determined again by the various classes of devices. MTBF results are also discussed for parts subjected to ionizing rate tests. Total dose hardness assurance is discussed for the low-power transistors and for the low-power transistors and for the op amp separately. Low dose screening is included in this section although it differs slightly from the normal techniques of electrical screening.