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Investigation of Optical and Electrical Properties of Light-Emitting Materials.

机译：发光材料的光电特性研究。

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The report concerns research on the optical and electrical properties of I-III-VI and II-VI semiconductor compounds. Materials have been synthesized and crystals have been grown for these efforts. Six of the I-III-VI2compound crystals were grown and were found upon analysis to possess the chalcopyrite structure. The lattice parameters of these crystals were evaluated. The best quality crystals have been AgGaS2;consequently,this material has been the most extensively investigated.

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作者
schneider,james yu, phil won;
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年度 1974
页码 1-61
总页数 61
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
semiconductors; luminescenceelectrooptics; electroluminescence; photoluminescence; crystal growth; optical properties; electrical properties; transport properties; sulfides; selenides; tellurides; silver compounds; gallium compounds; zinc sulfides; zinc selenides; copper compounds; aluminum compounds; indium compounds; x ray diffraction; computer programs;

机译：半导体;发光电子学;电致发光;光致发光;晶体生长;光学性质;电学性质;传输性能;硫化物;硒化物;碲化物;银化合物;镓化合物;硫化锌;硒化锌;铜化合物;铝化合物;铟化合物; x射线衍射;电脑程序;

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专利

1. Investigation of the Carrier Dynamic in GaN-Based Cascade Green Light-Emitting Diodes Using the Very Fast Electrical–Optical Pump–Probe Technique [J] . Shi J.-W., Huang H.-W., Kuo F.-M., Electron Devices, IEEE Transactions on . 2011,第2期

机译：使用非常快的电光泵浦探针技术研究GaN基级联绿色发光二极管的载流子动力学
2. Electrically induced light emission from proton-conducting materials. Protonic light-emitting diodes [J] . Langer Jerzy J., Frackowiak Ewelina, Golczak Sebastian Journal of Materials Chemistry, C. materials for optical and electronic devices . 2020,第3期

机译：电诱导质子导电材料的光发射。质子发光二极管
3. Effects of size on the electrical and optical properties of InGaN-based red light-emitting diodes [J] . Zhe Zhuang, Daisuke Iida, Kazuhiro Ohkawa Applied Physics Letters . 2020,第17期

机译：尺寸对InGaN基红色发光二极管电和光学性能的影响
4. A novel Silicon-Nitride based Light-Emitting Transistor (SiNLET): optical/electrical properties of a SONOS-type three-terminal electroluminescence device for optical communication in ULSI [C] . C. C. Yeh, W. J. Tsai, T. C. Lu, International Electron Devices Meeting . 2005

机译：一种新型氮化硅发光晶体管（SINLET）：SONOS型三端电致发光器件的光/电性能，用于ULSI中的光学通信
5. Optical, mechanical, and electrical properties of nano-structured materials. [D] . Chang, Chia-Chi. 2012

机译：纳米结构材料的光学，机械和电学性质。
6. Electrical and Optical Properties of a Transparent Conductive ITO/Ga2O3/Ag/Ga2O3 Multilayer for Ultraviolet Light-Emitting Diodes [O] . Siwei Liang, Quanbin Zhou, Xianhui Li, 2019

机译：紫外发光二极管用透明导电ITO / Ga2O3 / Ag / Ga2O3多层膜的电学和光学性质
7. Effect of V-pits embedded InGaN/GaN superlattices on optical and electrical properties of GaN-based green light-emitting diodes (Phys. Status Solidi A 5∕2017) [O] . Shengjun Zhou, Xingtong Liu 2017

机译：V-Pits Embedded Ingan / GaN超晶格对GaN的绿色发光二极管光学和电性能的影响（物理SOLVI A 5/2017）
8. Investigation of Optical and Electrical Properties of Wide Band Gap Materials. [R] . yu, phil won faile,samuel 1976

机译：宽带隙材料的光电特性研究。

Investigation of Optical and Electrical Properties of Light-Emitting Materials.

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