The Infrared Extended,Gates CCI (Charge Coupled Imager).

摘要

The imaging capabilities of an infrered (IR) extended,integrating charge coupled imager (CCI) with a gated input are discussed with reference to the conventional silicon CCI. A photoconductive input circuit is considered and the dependence of device characteristics on the material parameters of the photosensor and the input channel are discussed. The input characteristics are illustrated with the aid of the photosensor-substrate combination consisting of amorphous GeTe and silicon,respectively. Since the essential difference between this device and the conventional silicon CCI is the input circuit,the discussion centers on the signal to noise ratio of the input section. (Modified author abstract)