Thin Film Optical Waveguides in III-V Semiconductors.

摘要

The development of techniques for the growth of large area vapor phase epitaxial GaAs and GaAsP,and liquid phase epitaxial GaAs and GaAlAs,waveguide structures is described. GaAs n/n(+) and GaAs/GaAsP waveguide structures have been grown and evaluated and the results have been compared to calculated attenuation rates. The results demonstrate the advantages of an alloy structure for GaAs waveguides at 10.6micrometer wavelength. An analysis of waveguides with graded indices of refraction is described. A preliminary demonstration of Bragg's diffraction Electro-optical Modulation in GaAs waveguides has also been obtained. (Author)