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Study of Pb(1-x) Sn(x) Te and Pb(1-y) Sn(y) Se Photodetectors.

机译:pb(1-x)sn(x)Te和pb(1-y)sn(y)se光电探测器的研究。

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摘要

Two photodetection studies of the narrow gap IV-VI alloy semiconductors were made. In the first study,the photoconductive response of Pb(0.9) Sn(0.1) Se and Pb(0.68) Sn(0.32) Se were investigated. In the second study,single heterojunction Pb(1-x) Sn(x) Te diodes fabricated by sequential depositions of p type Pb(0.86) Sn(0.32) Te and n type Pb(0.8) Sn(0.2) Te were studied. Results are discussed.

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