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Chemical Trends in Oxygen Uptake Rates at the Ordered Surfaces of Tetrahedrally Coordinated Compound Semiconductors.

机译:四面体配位化合物半导体有序表面氧吸收速率的化学趋势。

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摘要

It is observed that oxygen uptake at ordered free surfaces of tetrahedrally coordinated semiconductors decreases with increasing bonding ionicity. This behavior is compared with the dependence of the contact potential at a Schottky barrier on the semiconductor bonding ionicity, and an explanation based on the Mead-Spitzer and Phillips models is suggested. (Author)

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