Study of Radiation Effects in Bulk CMOS Microcircuits, I2L/LSI Logic Cells and Optical Couplers

摘要

Results are presented on the study of radiation effects in bulk CMOS microcircuits, basic logic cells of developmental integrated-injection-logic (I2L) LSI, and optical couplers. Radiation effects considered include the permanent damage effects resulting from neutron displacement damage and total ionizing radiation dose. Transient photoresponse has been measured as a function of ionizing radiation pulse width. CMOS latch-up was investigated as induced by electrical pulsed overstress and/or pulsed ionizing radiation exposure. No significant synergistic effects were observed. (Author)