Surface and Bulk Charge Carrier Transport in InAs Epilayers

摘要

The purpose of this study was to characterize the electrical properties of InAs single crystal epilayers over a temperature range from 4K to 300K and to determine the effect of the surface transport characteristics on the measured galvanomagnetic parameters. The technique used was to measure the magnetic field dependence of the Hall coefficient and the conductivity of the various temperatures. The extra information from the variation of Hall coefficient with field allows one to separate the surface from the bulk properties of the epilayer.