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Passivation of InAs and GaSb with High 954; Dielectrics - Growth, Structural, Chemical and Electrical Characterization

机译：Inas和Gasb的钝化高954;电介质 - 生长，结构，化学和电学特性

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This is the final report of a project in which chemical and electronic characteristics on Al2O3/Gd2O3/InAs interfaces were studied using x- ray photoelectron spectroscopy.

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作者
Hong, M.; Kwo, J. R.;
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年度 2011
页码 1-4
总页数 4
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
X ray photoelectron spectroscopy ; Gallium antimonides ; Indium arsenides ; Dielectrics ; Passivity ; Taiwan ; Chemical properties ; Electronics;

机译：X射线光电子能谱;锑化镓;砷化铟;电介质;无源性;台湾;化学性质;电子学;
入库时间 2022-08-29 10:52:22

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专利

1. Epitaxial growth and characterization of InAs/GaSb and InAs/InAsSb type-Ⅱsuperlattices on GaSb substrates by metalorganic chemical vapor deposition for long wavelength infrared photodetectors [J] . Y. Huang, J.-H. Ryou, R.D. Dupuis, Journal of Crystal Growth . 2011,第1期

机译：用于长波长红外光电探测器的金属有机化学气相沉积在GaSb衬底上InAs / GaSb和InAs / InAsSb II型超晶格的外延生长和表征
2. Electrical And Structural Characterization Of A Single Gasb/inas/gasb Quantum Well Grown On Gaas Using Interface Misfit Dislocations [J] . Kurt G. Eyink, David H. Tomich, William C. Mitchel, Journal of Applied Physics . 2008,第7期

机译：使用界面失配位错在Gaas上生长的单个Gasb / inas / Gas量子阱的电气和结构表征
3. Electrical characterization of chemical and dielectric passivation of InAs nanowires [J] . Holloway Gregory W., Haapamaki Chris M., Kuyanov Paul, Semiconductor science and technology . 2016,第11期

机译：InAs纳米线化学和介电钝化的电学表征
4. The dependence on growth temperatures of the electrical and structural properties of GaSb/InAs single quantum well structures grown by MBE [C] . S.J.Chung, A.G.Norman, W.T.Yuen, International symposium on compound semiconductors . 1996

机译：MBE生长的GaSb / InAs单量子阱结构的电和结构性质对生长温度的依赖性
5. Study of Structural, Optical and Electrical Properties of InAs/InAsSb Superlattices Using Multiple Characterization Techniques. [D] . Shen, Xiaomeng. 2015

机译：使用多种表征技术研究InAs / InAsSb超晶格的结构，光学和电学性质。
6. Self-Catalyzed Growth of Vertical GaSb Nanowires on InAs Stems by Metal-Organic Chemical Vapor Deposition [O] . Xianghai Ji, Xiaoguang Yang, Tao Yang 2017

机译：金属有机化学气相沉积法在InAs茎上自催化生长垂直GaSb纳米线
7. Electrical characterization of chemical and dielectric passivation of InAs nanowires [O] . Gregory W Holloway, Chris M Haapamaki, Paul Kuyanov, 2016

机译：INAS纳米线的化学和介电钝化的电气特征
8. Passivation of InAs and GaSb with Novel High kappa Dielectrics [R] . Hong, M., Kwo, J. R. 2011

机译：新型高kappa电介质对Inas和Gasb的钝化

Passivation of InAs and GaSb with High 954; Dielectrics - Growth, Structural, Chemical and Electrical Characterization

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