Production Engineering Measure for High Burnout Resistant Mixer Diodes.

摘要

The object of this program is to develop the processes, techniques and manufacturing methods to manufacture S, X and Ku-band high burnout resistant mixer diodes. These diodes are to be used as replacements for 1N21, 1N23 and 1N78 type point contact diodes in existing S, X, and Ku-band Schottky-Barrier diodes were manufactured and were characterized for their RF performance. (Author)