Manufacturing Methods for Radiation-Hardened Multiple IC Chip Package

摘要

Investigations are described which lead to the implementation of manufacturing methods and processes for fabrication by aluminum anodization of single and dual layer metal interconnects for radiation hardened integrated circuits. In addition, an all aluminum, radiation hardened, multichip assembly method is described that completely eliminates flying wires and achieves a high chip packing density in a hermetically sealed package. These manufacturing methods are demonstrated by the fabrication of anodized radiation hardened integrated circuits and by the fabrication of a multichip six bit adder, each containing twelve anodized and/or inverter TTL gates and four anodized quad two input NAND gates. (Author)