Study of a Phosphorus Planar Diffusion Source.

摘要

A phosphorus planar diffusion source (PDS) is a ceramic-like material in wafer form which is placed in the diffusion furnace with the silicon wafers. Each PDS wafer can be used to dope one or two silicon wafers, providing phosphorus atoms which diffuse into the silicon. The main objective of the thesis has been to obtain experimental data on the sourcing characteristics of the phosphorus PDS in preparation for their use in the manufacture of devices. The parameters which characterize the sourcing ability of a material, and which were therefore studied are the time, temperature, ambient gas, and ambient gas flow rates. The spacing and position of the PDS in relation to the silicon wafers are parameters unique to the PDS and were also investigated.