Research on Crystal Growth and the Optical and Magneto-Optical Properties of Semiconductors.

摘要

This report covers the research performed during the period from 1 July 1964 to 30 June 1974 by scientists from the Group 'Research on Crystal Growth and the Optical and Magneto-Optical Properties of Semiconductors' and was performed in the Solid State Physics Research Laboratory of the Aerospace Research Laboratories Wright-Patterson Air Force Base, Ohio, under Project 7885, Task 01. Some highlights and significant achievements of the research program in the areas of crystal growth, optical and magneto-optical properties of II-VI and III-V semiconductors, and device oriented research are discussed qualitatively. The crystal growth program is discussed in terms of defect production and purification in the II-VI semiconducting compounds, particuarly CdS, CdSe, ZnS, ZnO, ZnSe, ZnTe, CdTe and alpha-HgS. The optical and magneto-optical properties of the II-VI compounds are discussed either with respect to characterization of their fundamental optical and magneto-optical parameters, or to characterization of the defect and impurity structure of these materials. Experimental values of some of the more important physical constants of these materials, such as bandgaps, electron and hole effective masses and g-factors, exciton parameters, dielectric constants and refractive indices, are summarized in the various tables of the report.