Heterojunction Contacts for Transferred-Electron Devices.

摘要

The aim of the research described in this annual report is the development of heterojunction contacts for transferred-electron devices involving the GaInAsP-InP heterojunction system, with InP being the transferred-electron material. The details of the growth of GaInAsP on InP by liquid phase epitaxy are described, and the evaluation of these heterojunctions are discussed. Some computer simulations of heterojunctions are described and preliminary experimental results from GaInAsP-InP n-n heterojunction diodes indicate that the conduction band discontinuity is small for that system. (Author)