Top Collector Contacted Microwave Power Transistor;Monolithic Microwave Lumped Element Integrated Circuit Program -Phase I.

摘要

The objective of the contract is to investigate the monolithic integrated circuit approach for the fabrication of RF power transistors and associated matching networks to eliminate hand working, wire bonding and to provide improved uniformity, yield, reliability and ultimately, lower cost. Specifically, Phase I of this work calls for an all top contacted 30 watt, 1.0 to 1.5 GHz power transistor. The devices meet or exceed all the contract requirements (30 watt at 1.5 GHz with 7dB gain). The final processes used and the best results are discussed. Also discussed is the processing of the monolithic matching networks. A process has been developed to process the networks that is compatible with the device processing. The losses in the networks are approximately equal to the presently used lumped element networks. The final process and test results are discussed.