Initial Tests of Induced-Current Microcircuit Damage Produced by Lightning.

摘要

The vulnerability of electronics systems to damage and malfunction produced by lightning strikes is reviewed. Initial test data are shown in which this damage phenomenon is verified. The requirements and problems inherent in a magnetic-field measurement with which to accomplish an in situ measurement of lightning transients are discussed, the next series of measurements are described, and future directions for the research are indicated. (AUthor)