Line Strengths, Collison Strengths and Excitation Rates for Multiply-Charged Silicon Ions.

摘要

Line strengths, collision strengths and excitation rates have been calculated for a variety of transitions in multicharged silicon ions from Si VI to Si XIV. The collision strengths were evaluated in an LS coupling scheme in the distorted wave approximation neglecting exchange except for the helium-like transitions. Excitation rates were then obtained by integrating the collision strength over a Maxwellian velocity distribution function. These results are then described by a simple two-parameter fit for the rates.