Vertical Transistor Investigation for I2L Structures.

摘要

A one-dimensional mathematical model is presented for the vertical transistor associated with an I2L semiconductor device. This particular model represents a modification of similar models used for bipolar transistor operation;it requires little computer time and has been subjected to extensive verification over past years. Although incomplete in its present form,the model suggested here is based upon the physical mechanisms encountered during semiconductor device operation. For this reason,it is suggested that little additional effort would be required to complete this model,including the physical mechanisms associated with damage arising from an ionizing type of radiation environment. (Author)