A New Look at the Role of Circuit Design on Electron Device Reliability.

摘要

The effect of circuit design on the reliability of both solid-state and tube-type active devices is considered. A new design approach is presented based on the Ebers-Moll model equations indicating that the proper use of device transconductance can lead to a substantial reduction in circuit voltage with at most a slight reduction in available power output. At the same time, considerably reduced power dissipation and improved device reliability result. Typical problems are examined which show improvements obtained compared to the usual approach to circuit design based on transistor beta characteristics. These detailed examples show the use and benefits of the new design approach as compared to traditional methods. (Author)