Photoluminescence of Gallium Arsenide Encapsulated with Aluminum and Silicon Nitride Films.

摘要

Aluminum and silicon nitride films were deposited on lightly doped n-type GaAs:Si by low energy ion beam sputtering. The films showed no signs of deterioration when annealed at 900 C, and the GaAs photoluminescence spectra showed new features only at the higher annealing temperatures. (Author)