Growth and Homogeneity Characterization of Mercury Cadmium Telluride Crystals.

摘要

Epitaxial layers of mercury telluride were grown by the new method of current controlled liquid phase epitaxy (CCLPE). The apparatus necessary to grow highly homogeneous crystalline layers of this material by this new technique was designed and constructed. The design has been tested repeatedly and a number of crystalline layers have been successfully grown. These layers have been studied micrographically and with the use of X-ray diffraction and electrolyte electroreflectance techniques. (Author)