Models of Fabrication Processes, Devices, Circuits, and Systems for Computer-Aided Design of VLSI

摘要

This report covers the technical progress of the program over the six-month period, February 15, 1979 to August 15, 1979. Its organization corresponds to that of the contract proposal with sections devoted to Thermal Oxidation, Ion Implantation, Chemical Vapor Deposition of Silicon, Materials Analysis and Interface Physics, and Complete Process and Device Simulation. Each section contains a description of progress made, including difficulties encountered, results obtained with their supporting data, and brief plans for the future. (Author)