首页> 美国政府科技报告 >On the Physics and Modeling of Small Semiconductor Devices. III. Transient Response in the Finite Collision-Duration Regime

【24h】

On the Physics and Modeling of Small Semiconductor Devices. III. Transient Response in the Finite Collision-Duration Regime

机译：关于小型半导体器件的物理与建模。 III。有限碰撞持续时间内的瞬态响应

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

No abstract available.

著录项

作者
Ferry, D. K.; Barker, J. R.;
展开▼
作者单位

展开▼
年度 1979
页码 p.1-7
总页数 7
原文格式 PDF
正文语种 eng
中图分类工业技术 ;
关键词
Semiconductor devices; Transport properties; Boltzmann equation; Charge carriers; Particle collisions; Electric fields; Reprints;

机译：半导体器件;传输特性;玻尔兹曼方程;电荷载流子;粒子碰撞;电场;重印;

相似文献

外文文献
中文文献
专利

1. A multi-physics coupling cell-based smoothed finite element micromechanical model for the transient response of magneto-electro-elastic structures with the asymptotic homogenization method [J] . Zhou Liming, Tang Jinghao, Tian Weijun, Thin-Walled Structures . 2021 ,第Auga期

机译：一种多物理耦合电池基平滑有限元微机械模型，用于渐近均质方法磁极电弹性结构的瞬态响应
2. Transient dynamics and stability of keyhole at threshold in laser powder bed fusion regime investigated by finite element modeling [J] . Mayi Yaasin A., Dal Morgan, Peyre Patrice, Journal of Laser Applications . 2021 ,第1期

机译：用有限元建模研究激光粉床融合制度阈值晶孔的瞬态动力学和稳定性
3. Modeling small-signal response of GaN-based metal-insulator-semiconductor high electron mobility transistor gate stack in spill-over regime: Effect of barrier resistance and interface states [J] . M. Capriotti, P. Lagger, C. Fleury, Journal of Applied Physics . 2015 ,第2期

机译：在溢出状态下对基于GaN的金属-绝缘体-半导体高电子迁移率晶体管栅堆叠的小信号响应进行建模：势垒电阻和界面态的影响
4. TRANSIENT DYNAMICS AND KEYHOLE STABILITY AT THRESHOLD IN LPBF REGIME INVESTIGATED BY FINITE ELEMENT MODELING [C] . Yaasin A. Mayi, Morgan Dal, Patrice Peyre, International Congress on Applications of Lasers Electro-Optics . 2020

机译：通过有限元建模研究的LPBF制度阈值的瞬态动力学和锁孔稳定性
5. PHYSICS AND NUMERICAL MODELING OF CARRIER TRANSPORT IN SUBMICRON SEMICONDUCTOR DEVICES. [D] . COOK, ROBERT KIMBAL. 1981

机译：亚微半导体器件中载流子传输的物理和数值模拟。
6. Physics-Based Device Models and Progress Review for Active Piezoelectric Semiconductor Devices [O] . Hongseok Oh, Shadi A. Dayeh 2020

机译：基于物理的设备模型和有源压电半导体器件的进度综述
7. Finite element solution of the fundamental equations of semiconductor devices. II [O] . Zlámal, Miloš 2001

机译：半导体器件基本方程式的有限元解。 II
8. Review of the Physics and Response Models for Burnout of Semiconductor Devices. [R] . Orvis, W. J., Khanaka, G. H., Yee, J. H. 1984

机译：半导体器件烧毁的物理和响应模型综述。

On the Physics and Modeling of Small Semiconductor Devices. III. Transient Response in the Finite Collision-Duration Regime

摘要

著录项

相似文献

相关主题

期刊订阅