首页> 美国政府科技报告 >Transverse Acoustoelectric Voltage (TAV) Spectroscopy of Gallium Phosphide, Indium Arsenide and Cadmium Sulphide-Nickel Chloride

【24h】

Transverse Acoustoelectric Voltage (TAV) Spectroscopy of Gallium Phosphide, Indium Arsenide and Cadmium Sulphide-Nickel Chloride

机译：磷化镓，砷化铟和硫化镉 - 氯化镍的横向声电压（TaV）光谱

获取原文

页面导航

摘要
著录项
引文网络
相似文献
相关主题

摘要

No abstract available.

著录项

作者
Das, P.;
展开▼
作者单位

展开▼
年度 1979
页码 p.1-6
总页数 6
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Semiconductors; Gallium phosphides; Indium compounds; Cadmium sulfides; Nickel compounds; Chlorides; Acoustics; Voltage; Surfaces; Spectroscopy; Electric fields; Reprints;

机译：半导体;磷化镓;铟化合物;硫化镉;镍化合物;氯化物;声学;电压;表面;光谱学;电场;重印;

相似文献

外文文献
中文文献
专利

1. An energetic study on the formation of self-assembled indium arsenide nanostructures grown on indium gallium arsenide/indium phosphide and gallium arsenide substrates [J] . F Shi, Kuo-Lih Chang, K C Hsieh Proceedings of the Institution of Mechanical Engineers, Part N: Journal of Nanoengineering and Nanosystems . 2007,第1期

机译：在砷化铟镓/磷化铟和砷化镓衬底上生长的自组装砷化铟纳米结构形成的有力研究
2. Transverse‐acoustoelectric‐voltage (TAV) spectroscopy of high‐resistivity GaAs [J] . Journal of Applied Physics . 1979,第7期

机译：高电阻率砷化镓的横向声电压（TAV）光谱
3. Physics-based simulation study of high-performance gallium arsenide phosphide–indium gallium arsenide tunnel field-effect transistor [J] . Bhagwan Ram Raad, Dheeraj Sharma, Kaushal Nigam, Micro & Nano Letters, IET . 2016,第7期

机译：高性能砷化镓磷化物-砷化铟镓隧道场效应晶体管的基于物理的仿真研究
4. Improved efficiency of photovoltaic cell based on indium-phosphide-oxide, indium-phosphide, indium-gallium arsenide and indium-gallium-antimonide [C] . Barua Soumen, Abdulla-Al-Galib Mir, Salam K. M. A., 2012 2nd International Conference on Developments in Renewable Energy Technology . 2012

机译：基于磷化铟氧化物，磷化铟，砷化铟镓镓和锑化铟镓镓的光伏电池效率的提高
5. High -precision correlation of fundamental material parameters for bulk indium gallium arsenide on indium phosphide and indium gallium arsenide HEMT structures using photoluminescence, x-ray diffraction, photoreflectance, and Raman spectroscopy [D] . Estrera, Joseph Paul 1992

机译：使用光致发光，x射线衍射，光反射和拉曼光谱法，对磷化铟和砷化铟镓HEMT结构上的块状砷化铟镓的基本材料参数进行高精度关联
6. Cobalt in hard metals and cobalt sulfate gallium arsenide indium phosphide and vanadium pentoxide. [O] . -1

机译：硬金属中的钴和硫酸钴砷化镓磷化铟和五氧化二钒。
7. Room-temperature carrier lifetimes and optical nonlinearities of gallium-indium-arsenide/aluminum-indium-arsenide and gallium-aluminum-indium-arsenide/aluminum-indium-arsenide MQW devices at 1.3μm [O] . Johns Steven 1964- 1991

机译：砷化镓铟/铝铟砷化物和砷化镓铝铟砷/铝铟砷化物MQW器件在1.3μm的室温载流子寿命和光学非线性
8. Theoretical Studies of High Energy Transport of Electrons and Holes in Gallium Arsenide, Indium Phosphide, Indium Arsenide, and Gallium Antimonide. [R] . Brennan, K. F. 1984

机译：砷化镓，磷化铟，砷化铟和锑化镓中电子和空穴高能迁移的理论研究。

Transverse Acoustoelectric Voltage (TAV) Spectroscopy of Gallium Phosphide, Indium Arsenide and Cadmium Sulphide-Nickel Chloride

摘要

著录项

引文网络

相似文献

相关主题

期刊订阅