MOS Measurement Methods, Design Principles for a Radiation-Hardened CMOS/SOS Memory

摘要

The survival of data in a memory through very high levels of transient ionizing radiation (> 10 to the 11th power rads(Si)/sec) has been a very difficult problem. This report describes the principles used in the design of a hardened memory, using CMOS/SOS technology. The design also provides high packing density (1024 bits in less than 16000 sq mils), high speed (cycle time < or = 350 nsec), low power (< 50 mW) and ease of use (16 pin packaging with a single-chip enable clock). (Author)