Pin Diode Trade-Off Study for Broadband High Power Fast Switching Speed Microwave Switches.

摘要

The contract was for the investigation of fundamental PIN diode switching speed and RF power handling trade-offs. The program was conducted in two phases. The first phase was to determine the characteristics of PIN diodes. This characterization was conducted experimentally with I-region thickness as the prime variable. Each diode type was evaluated in terms of its inherent power handling capabilities and switching characteristics. The equivalent circuit parameters for each diode type were also compiled to determine the frequency response of proposed switch designs. The second phase of the program was to develop a series of broadband switches which would incorporate the design information generated from the initial effort, and compare the results. Diodes ranging from 2 microns to 100 microns thickness I-region were utilized. Their static characteristics were determined and samples of each were designed into single chip all-shunt SPST switch circuits. These were then subjected to various switching speed and high power RF tests at three frequencies in the microwave spectrum. The results from the diode study led to the generation of specifications for five switches.