Total Dose Hardness Assurance. Volume I. Identification of Techniques

摘要

This report covers the first phase of a three phase program to develop hardness assurance techniques for the total ionizing radiation dose environment for bipolar and MOS semiconductor devices. Phase I consists of identifying and verifying potentially useful techniques. The report is presented in two volumes. Volume one discusses all of the potential hardness assurance techniques that were identified and whether or not they are sufficiently verified in previous studies. In addition, new techniques are proposed based on models of radiation-induced hole trapping and interface state generation. Each technique identified or proposed is discussed in terms of its implementation, cost effectiveness, and acceptability. Recommendations are made for each technique to: (a) reject for this program, (b) verify its usefulness with further testing, or (c) accept as useful and include in the evaluation phase. The techniques investigated fall into five major categories: (1) preirradiation device electrical tests, (2) preirradiation tests on special test devices or wafers, (3) process or design controls, (4) radiation simulation tests, and (5) radiation tests. Over 20 techniques were identified and 9 were selected for further studies.