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Transmission Electron Microscopy and Ion-Channeling Studies of Heteroepitaxial Ge(1-X)Si(X) Films Produced by Transient Heating

机译：瞬态加热产生的异质外延Ge（1-X）si（X）薄膜的透射电子显微镜和离子通道研究

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作者
Tsaur, B. Y.; Fan, J. C.; Sheng, T. T.;
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年度 1980
页码 p.1-4
总页数 4
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Semiconducting films; Germanium; Silicon; Electron microscopy; Semiconductors; Epitaxial growth; Crystal defects; Reprints;

机译：半导体薄膜;锗;硅;电子显微镜;半导体;外延生长;晶体缺陷;重印;

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2. In situ ultra-high vacuum transmission electron microscopy studies of the transient oxidation stage of Cu and Cu alloy thin films [J] . Judith C. Yang, Guangwen Zhou Micron: The international research and review journal for microscopy . 2012,第11期

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3. Transmission electron microscopy and scanning transmission electron microscopy study on S-site cation ordered structures in a (1-x)Pb(Mg_(1/3)Nb_(2/3))O_3-xPbTiO_3 single crystal [J] . Yukio Sato, Teruyasu Mizoguchi, Naoya Shibata, Applied Physicsletters . 2009,第2期

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Transmission Electron Microscopy and Ion-Channeling Studies of Heteroepitaxial Ge(1-X)Si(X) Films Produced by Transient Heating

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