Epitaxial Growth of CdSnP2 on InP for Microwave FETs

摘要

CdSnP2 platelets were grown from Sn solutions to provide samples for characterizing ohmic and Schottky barrier contacts. High temperature Hall and resistivity measurements indicate that the observed n-type conductivity is due to a deficiency of the volatile constituents; probably phosphorus. Both liquid phase and molecular beam epitaxy were examined for the epitaxial growth of CdSnP2 on InP substrates. Best results were obtained with an open tube liquid phase system using a step-cooling technique. X-ray diffraction measurements indicate a lattice mismatch of about - 0.5% for these layers. (Author)