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Stress-Enhanced Carrier Mobility in Zone Melting Recrystallized Polycrystalline Si Films on SiO2-Coated Substrates

机译：siO2涂层衬底上区域熔化重结晶多晶硅薄膜的应力增强载流子迁移率

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作者
Tsaur, B. Y.; Geis, M. W.; Fan, J. C.;
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年度 1981
页码 p.1-4
总页数 4
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Integrated circuits; Carrier mobility; Silicon; Silicon dioxide; Stresses; Zone melting; Films; Substrates; Recrystallization; Reprints;

机译：集成电路;载流子迁移率;硅;二氧化硅;应力;区域熔化;薄膜;基板;再结晶;重印;

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专利

1. Excimer-Laser-Induced Zone-Melting-Recrystallization of Silicon Thin Films on Large Glass Substrates and Its Application to TFTs [J] . Hiromichi TAKAOKA, Yoshinobu SATOU, Takaomi SUZUKI, IEICE Transactions on Electronics . 2002,第11期

机译：准分子激光诱导的大型玻璃基板上硅薄膜的区域熔化再结晶及其在TFT中的应用
2. Dependence of carrier mobility on grain mosaic spread in < 001 > -oriented Si films grown on polycrystalline substrates [J] . Woong Choi, Vladimir Matias, Jung-Kun Lee, Applied Physics Letters . 2005,第15期

机译：载流子迁移率对在多晶衬底上生长的<001>取向硅膜中晶粒镶嵌分布的依赖性
3. Well-Oriented Silicon Thin Films with High Carrier Mobility on Polycrystalline Substrates [J] . Alp T. Findikoglu, Woong Choi, Vladimir Matias, Advanced Materials . 2005,第12期

机译：取向良好的多晶硅薄膜具有高载流子迁移率
4. Stress-enhanced mobility in MOSFETs fabricated in zone-melting-recrystallized poly-Si films [C] . Tsaur B.-Y., Fan J.C.C., Geis M.W., Electron Devices Meeting, 1981 International . -1

机译：在区域熔化再结晶的多晶硅膜中制造的MOSFET中应力增强的迁移率
5. Three-dimensional simulation of rapid melting and recrystallization of silicin thin films by excimer laser using cellular automata algorithm. [D] . Kisdarjono, Hidayat. 2004

机译：利用细胞自动机算法通过准分子激光对硅素薄膜进行快速熔融和重结晶的三维模拟。
6. Characteristics of Carrier Transport and Crystallographic Orientation Distribution of Transparent Conductive Al-Doped ZnO Polycrystalline Films Deposited by Radio-Frequency Direct-Current and Radio-Frequency-Superimposed Direct-Current Magnetron Sputtering [O] . Junichi Nomoto, Katsuhiko Inaba, Shintaro Kobayashi, 2017

机译：射频直流和射频叠加直流磁控溅射沉积的透明导电掺铝ZnO多晶薄膜的载流子输运和晶体学取向特征
7. Dependence of carrier mobility on grain mosaic spread in ⟨001⟩-oriented Si films grown on polycrystalline substrates [O] . Choi Woong, Matias Vladimir, Lee Jung-Kun, 2005

机译：载流子迁移率对多晶衬底上生长的⟨001⟩取向Si膜中晶粒镶嵌的影响
8. Stress-Enhanced Carrier Mobility in Zone Melting Recrystallized Polycrystalline Si Films on SiO2-Coated Substrates. [R] . Tsaur, B. Y., Geis, M. W., Fan, J. C. 1981

机译：siO2涂层衬底上区域熔化重结晶多晶硅薄膜的应力增强载流子迁移率。

Stress-Enhanced Carrier Mobility in Zone Melting Recrystallized Polycrystalline Si Films on SiO2-Coated Substrates

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