Pulsed Raman Measurement of the Onset of Recrystallization in Laser Annealing

摘要

We have made the first time-resolved measurement of the onset of recrystallization following pulsed laser irradiation of ion-implanted silicon. We find recrystallization to be nearly complete 25 nsec after a 7 nsec annealing pulse with focussed energy density of 0.6 J/sq cm.