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Optical and Electrical Characterization of Multiply Doped Silicon. A Study of the Si:(In,Al) System

机译：掺杂多晶硅的光电特性。 si：（In，al）系统的研究

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Brown, D. H.; Ohmer, M. C.; Beasley, K. D.; Rome, J. J.; Brown, G. J.;
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年度 1982
页码 p.1-7
总页数 7
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Single crystals; Optical properties; Electrical properties; Doping; Photoluminescence; Photoconductivity; Spectrum analysis; Reprints;

机译：单晶;光学性质;电学性质;掺杂;光致发光;光电导;光谱分析;重印;

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专利

1. Optical and electrical characterization of multiply doped silicon: A study of the Si:(In,Al) system [J] . Journal of Applied Physics . 1982,第12期

机译：多掺杂硅的光学和电学特性：Si：（In，Al）系统的研究
2. Studies on crystal growth, optical and electrical characterization of pure and Dy-doped bismuth silicate single crystals [J] . P. Mythili, T. Kanagasekaran, G. Bhagavannarayana, Journal of Crystal Growth . 2012,第1期

机译：纯和掺Dy硅酸铋单晶的晶体生长，光学和电学性质的研究
3. Modification of Optical and Electrical Characteristics of PEDOT:PSS by Umbelliferone Addition: Optical and Electrical Characterization of Umbelliferone Doped PEDOT:PSS for Photovoltaic Applications [J] . Berlim Leonardo Schneider, Thomazi Fabiano, Burkarter Ezequiel, Current Nanoscience . 2018,第5期

机译：修改PEDOT的光学和电气特性：PSS通过Umbelliferone添加：Umbelliferone掺杂PEDOT的光学和电气特性：PSS用于光伏应用
4. Electrical and optical characterizations of Ga-doped or Sb-doped InP crystal [C] . Liu, X., Ye, Indium Phosphide and Related Materials, 1991., Third International Conference. . 1991

机译：Ga掺杂或Sb掺杂InP晶体的电学和光学特性
5. ELECTRICAL CHARACTERIZATION OF DEEP LEVEL IMPURITIES IN SEMICONDUCTOR JUNCTIONS: SCHOTTKY BARRIERS OF HAFNIUM ON INDIUM DOPED P-TYPE SILICON. [D] . BEGUWALA, MOIZ MULLA ENAYATALI. 1975

机译：半导体结中深层杂质的电学表征：掺D的P型硅上的肖特基势垒。
6. Lu3+/Yb3+ and Lu3+/Er3+ co-doped antimony selenide nanomaterials: synthesis characterization and electrical thermoelectrical and optical properties [O] . Younes Hanifehpour, Sang Woo Joo, Bong-Ki Min 2013

机译：Lu3 + / Yb3 +和Lu3 + / Er3 +共掺杂硒化锑纳米材料：合成表征以及电热电和光学性质
7. Optical and Electrical Characterizations of Niobium-doped Ba0.25Sr0.75TiO3 (BSNT) on p-type Silicon and Corning Glass Substrates and its Implementation as Photodiode on Satellite of LAPAN – IPB [O] . Setiawan Aep, Aminullah, Juansah Jajang, 2016

机译：p型硅和康宁玻璃基板上掺铌的Ba0.25Sr0.75TiO3（BSNT）的光电特性及其在LAPAN – IPB卫星上作为光电二极管的实现
8. Optical and Electrical Characterization of Multiply Doped Silicon. A Study of the Si:(In,Al) System. [R] . Brown, D. H., Ohmer, M. C., Beasley, K. D., 1982

机译：掺杂多晶硅的光电特性。 si：（In，al）系统的研究。

Optical and Electrical Characterization of Multiply Doped Silicon. A Study of the Si:(In,Al) System

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