Numerical Analysis of Semiconductor Devices Using Microcomputers

摘要

Simulation of the electrical properties of semiconductor devices is investigated. Numerical techniques are developed to obtain the solution of Poisson's equation and the continuity of current equation for the potential and the charge distribution interior to arbitrarily shaped devices. The emphasis is on the use of small computers. Two novel metal-semiconductor diode designs for microwave and millimeter-wave applications are examined using the techniques developed here.