Dielectric Resonators for Use in Microwave and Millimeter-Wave GaAs Circuits.

摘要

This report represents the results of an investigation of dielectric resonators to be processed in GaAs substrates for application to microwave and millimeter-wave monolithic integrated circuits. Zeroth-and first order analyses are described. These analyses are applied to dielectric resonator structures to be formed in GaAs substrate material by etching an annular gap in the substrate, thereby effectively leaving a circular cylindrical disc of dielectric material to function as a resonator. Plots of geometric parameter variations with frequency are provided for these resonator structures. Tables are presented to show specific resonant structures for frequency-scaled microwave and non-scaled millimeter-wave resonators. Results are discussed, conclusions drawn, and suggestions for further work set forth. (Author)