Electrical Resistivity in Low Resistivity Amorphous Alloys.

摘要

The temperature dependence of the electrical resistivity in low resistivity (rho < 100 mu ohms cm) amorphous alloys is analyzed in the framework of the diffraction model. The standard diffraction model yields results in qualitative agreement with the available data. However, a quantitative agreement with the data is observed if phonon ineffectiveness effects are included by means of the Pippard-Ziman constraint. A variety of results are presented for ranges of 2kF/kp and electron mean free paths.