GaAs Monolithic Frequency Doublers with Series Connected Varactor Diodes

摘要

Gallium arsenide monolithic frequency doublers using series connected varactor diodes have been fabricated for the first time. Output powers of 150 mW at 36.9 GHz with 24% efficiency and 300 mW at 24.8 GHz with 18% efficiency have been obtained. Peak efficiencies of 35% at output power levels near 100 mW have been achieved at both frequencies. Both K-band and Ka-band frequency doublers are derived from a lower power, single-diode design by series connection of two diodes and scaling to achieve different power and frequency specifications. Their fabrication was accomplished using the same process sequence.