Large-Signal Characterization of Nonlinear Two-Port Active Networks

摘要

The objectives of this investigation include the development of a large-signal characterization procedure for nonlinear active two-port networks, analysis of the large-signal properties of MESFETs, and establishment of a large-signal MESFET equivalent circuit model. An approach for characterizing the single-frequency properties of a nonlinear two-port network is presented. The characterization results are useful in optimizing the external circuits for particular applications such as amplifiers and oscillators. The information obtained regarding network properties can be used for establishing amplifier and oscillator design and stability criteria. A GaAs MESFET was used as the nonlinear active two-port network, and its large-signal characteristics were measured. The nonlinear properties of the MESFET were investigated over the 7- to 13 GHz frequency range. The common drain configuration was studied extensively since this configuration is particularly advantageous for oscillator applications.