Generation of Field Sensitive Interface States in Commercial CMOS Devices

摘要

The introduction of metastable interface states by the application of a voltage stress has been studied in MOS devices from eleven commercial CMOS processes. Field sensitive interface effects have been observed in samples from four out of five A1 metal gate processes but only one out of six Si gate processes. A square root field dependence of the interface state generation has been observed. The initial interface state density has been characterized using a low temperature C-V displacement method and the results correlated to the radiation hardness of the oxides. Keywords include: Field Sensitive Interface States; Radiation Hardness of Oxides; CMOS Capacitor; and Cobalt 60.