Air as an Adjustable Insulator for C-V and G-V Analysis of Semiconductor Surfaces

摘要

An adjustable metal-air-semiconductor capacitor was fabricated using a Pb disk suspended 1700 - 3600 A above an n-type <111> surface. Experimental differential capacitance versus voltage and differential conductance versus voltage curves are similar to those previously obtained for metal-oxide-semiconductor capacitors. (Author)