Micro-Reactions of Metal Contacts on Various Types of GaAs Surfaces

摘要

Further XPS analysis results of a range of GaAs surfaces are reported which are produced by various technological steps such as etching in basic or acidic solutions as customary before the deposition of metals. The findings of lateral material transport between co-planar electrodes, on Metal-GaAs interdiffusion due to typical operational device conditions and on the electron wind in narrow conductors are presented.