High-Efficiency Double-Heterostructure AlGaAs/GaAs Solar Cells

摘要

Double-heterostructure solar cells have been fabricated from wafers prepared by using organometallic chemical vapor deposition to grow a p GaAs absorbing layer sandwiched between p+ and n+ A1GaAs layers. The best cell, which incorporates an abrupt A1GaAs/GaAs shallow heterojunction, exhibits a global AM1 one-sun conversion efficiency of 23%. The rate at which the open-circuit voltage decreases with increasing temperature is lower for the double-heterostructure cells than for GaAs shallow-homojunction cells.